? semiconductor components industries, llc, 2002 august, 2002 rev. 2 1 publication order number: mur2100e/d mur2100e preferred device switchmode ? power rectifier ultrafast aeo series with high reverse energy capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these stateoftheart devices have the following features: ? 20 mjoules avalanche energy guaranteed ? excellent protection against voltage transients in switching inductive load circuits ? ultrafast 75 nanosecond recovery time ? 175 c operating junction temperature ? low forward voltage ? low leakage current ? high temperature glass passivated junction mechanical characteristics ? case: epoxy, molded ? weight: 0.4 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 220 c max. for 10 seconds, 1/16 from case ? shipped in plastic bags, 1000 per bag ? available tape and reeled, 5000 per reel, by adding a arl'' suffix to the part number ? polarity: cathode indicated by polarity band ? marking: mur2100e maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 1000 volts average rectified forward current (note 1.) (square wave mounting method #3 per note 3.) i f(av) 2.0 @ t a = 35 c amps non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) i fsm 35 amps operating junction temperature and storage temperature range t j , t stg 65 to +175 c 1. pulse test: pulse width = 300 s, duty cycle 2.0%. device package shipping ordering information mur2100erl axial lead 5000/tape & reel mur2100e axial lead 1000 units/bag ultrafast rectifier 2 amperes 1000 volts preferred devices are recommended choices for future use and best overall value. axial lead case 05910 plastic marking diagram mur2100e mur2100e = device code http://onsemi.com
mur2100e http://onsemi.com 2 thermal characteristics characteristic symbol value unit maximum thermal resistance, junction to ambient r ja see note 3. c/w electrical characteristics maximum instantaneous forward voltage (note 2.) (i f = 2.0 amp, t j = 150 c) (i f = 2.0 amp, t j = 25 c) v f 1.75 2.20 volts maximum instantaneous reverse current (note 2.) (rated dc voltage, t j = 100 c) (rated dc voltage, t j = 25 c) i r 600 10 a maximum reverse recovery time (i f = 1.0 amp, di/dt = 50 amp/ s) (i f = 0.5 amp, i r = 1.0 amp, i rec = 0.25 a) t rr 100 75 ns maximum forward recovery time (i f = 1.0 a, di/dt = 100 a/ s, i rec to 1.0 v) t fr 75 ns controlled avalanche energy (see test circuit in figure 6) w aval 10 mj 2. pulse test: pulse width = 300 s, duty cycle 2.0%. v f , instantaneous voltage (volts) 1.0 10 i f 0.1 0.5 1.5 1.7 1.9 figure 1. maximum forward voltage , instantaneous forward current (amps) 0.7 1.3 100 c v f @ 175 c 25 c 150 c figure 2. typical forward voltage v f, instantaneous voltage (volts) 0.5 1.1 0.7 0.1 10 , instantaneous forward current (amps) f 2.3 0.9 1.0 1.7 2.1 75 c v f @ 150 c 25 c i 1.3 1.5 1.9 125 c 1.1 0.9
mur2100e http://onsemi.com 3 0 0.1 10 1000 200 v r , reverse voltage (volts) figure 3. maximum reverse current 1000 1.0 i r , reverse current ( a) 400 600 800 100 c i r @ 175 c 25 c 150 c v r , reverse voltage (volts) 0 200 400 600 0.001 0.1 1.0 i r 1000 figure 4. typical reverse current 0.01 , reverse current ( a) 125 c 25 c 1000 800 75 c i r @ 150 c i f(av) , average forward current (amps) 0 0.5 1.0 1.5 4.0 p f(av) 0 0.5 1.0 1.5 2.0 2.5 t a , ambient temperature ( c) 050 0 2.0 1.0 3.0 4.0 i 200 figure 5. current derating figure 6. power dissipation figure 7. typical capacitance 150 100 , average power dissipation (watts) , average forward current (amps) f(av) dc square wave square wave dc 100 10 100 2.0 2.5 3.0 3.5 0 3.0 10 20 2.0 10 20 v r , reverse voltage (volts) c, capacitance (pf) t j = 25 c 30 40 50 7.0 5.0
mur2100e http://onsemi.com 4 lead length, l mounting method 1/8 1/4 1/2 units 1 2 3 52 67 r ja 65 72 80 87 50 c/w c/w c/w typical values for r ja in still air data shown for thermal resistance junction to ambient (r ja ) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. note 3. e ambient mounting data mounting method 1 mounting method 2 mounting method 3 l l l l vector pin mounting l = 3/8 board ground plane p.c. board with 11/2 x 11/2 copper surface
mur2100e http://onsemi.com 5 package dimensions mini mosorb case 5910 issue s b d k k f f a dim min max min max millimeters inches a 4.10 5.20 0.161 0.205 b 2.00 2.70 0.079 0.106 d 0.71 0.86 0.028 0.034 f --- 1.27 --- 0.050 k 25.40 --- 1.000 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 59-04 obsolete, new standard 59-09. 4. 59-03 obsolete, new standard 59-10. 5. all rules and notes associated with jedec do-41 outline shall apply 6. polarity denoted by cathode band. 7. lead diameter not controlled within f dimension.
mur2100e http://onsemi.com 6 notes
mur2100e http://onsemi.com 7 notes
mur2100e http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 291 kamimeguro, meguroku, tokyo, japan 1530051 phone : 81357733850 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mur2100e/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
